BPW20RF www.vishay.com vishay semiconductors rev. 1.7, 11-aug-11 1 document number: 81570 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon photodiode, rohs compliant description BPW20RF is a planar silicon pn photodiode in a hermetically sealed short to-5 case, especially designed for high precision linear applications. due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. on the other hand, there is a st rictly logarithmic correlation between open circuit voltage and illumination over the same range. equipped with a clear, flat glass window, the spectral responsitivity reaches from blue to near infrared. features ? package type: leaded ? package form: to-5 ? dimensions (in mm): ? 8.13 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? angle of half sensitivity: ? = 50 ? hermetically sealed package ? cathode connected to package ? flat glass window ? uv enhanced ? low dark current ? high shunt resistance ? high linearity ? compliant to rohs directive 2002/95/ec and in accordance with weee 2002/96/ec applications ? sensor for light measurin g techniques in cameras, photometers, color analyzer s, exposure meters (e.g. solariums) and other medica l and industrial measuring and control applications. note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8482 product summary component i ra (a) ? (deg) ? 0.1 (nm) BPW20RF 60 50 400 to 1100 ordering information ordering code packaging remarks package form BPW20RF bulk moq: 500 pcs, 500 pcs/bulk to-5 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 10 v power dissipation t amb ? 50 c p v 300 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 125 c storage temperature range t stg - 40 to + 125 c soldering temperature t ? 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 250 k/w
BPW20RF www.vishay.com vishay semiconductors rev. 1.7, 11-aug-11 2 document number: 81570 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.0 1.3 v breakdown voltage i r = 20 a, e = 0 v (br) 10 v reverse dark current v r = 5 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 1.2 nf v r = 5 v, f = 1 mhz, e = 0 c d 400 pf dark resistance v r = 10 mv r d 38 g ? open circuit voltage e a = 1 klx v o 330 500 mv temperature coefficient of v o e a = 1 klx tk vo - 2 mv/k short circuit current e a = 1 klx i k 20 60 a temperature coefficient of i k e a = 1 klx tk ik 0.1 %/k reverse light current e a = 1 klx, v r = 5 v i ra 20 60 a e e = 1 mw/cm 2 , ? = 950 nm, v r = 5 v i ra 42 a angle of half sensitivity ? 50 deg wavelength of peak sensitivity ? p 920 nm range of spectral bandwidth ? 0.1 400 1100 nm rise time v r = 0 v, r l = 1 k ? , ? = 820 nm t r 3.4 s fall time v r = 0 v, r l = 1 k ? , ? = 820 nm t f 3.7 s 40 60 80 120 100 20 i - reverse dark current (na) ro 94 8468 10 10 1 10 2 10 3 10 4 v r =5v t amb - ambient temperature (c) 0.8 0.9 1.0 1.1 1.3 1.2 i - relative reverse light current ra rel 94 8469 v r =5v = 950 nm t amb - ambient temperature (c) 40 60 80 120 100 20 0
BPW20RF www.vishay.com vishay semiconductors rev. 1.7, 11-aug-11 3 document number: 81570 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - short circuit current vs. illuminance fig. 4 - reverse light current vs. irradiance fig. 5 - reverse light current vs. reverse voltage fig. 6 - diode capacitance vs. reverse voltage fig. 7 - relative spectral sensitivity vs. wavelength fig. 8 - relative radiant sensitivity vs. angular displacement i k - short circuit current (a) e a - illuminance (lx) 10 0 10 -2 10 -1 10 1 10 2 10 3 10 4 10 0 10 -1 10 -2 10 -3 10 -4 10 1 10 2 10 5 18959 10 3 0.1 1 10 100 0.01 0.1 1 i - reverse light current (a) ra e e - irradiance (mw/cm 2 ) 10 94 8471 v r =5v = 950 nm 0.1 1 10 1 10 100 v r - reverse voltage (v) 100 94 8472 = 950 nm 2 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm i - reverse light current (a) ra 0 400 600 800 1200 1400 1000 200 0.1 10 1 c - diode capacitance (pf) d 100 94 8473 e=0 f=1mhz v r - reverse voltage (v) 94 8474 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 - wavelength (nm) s ( ) rel - relative spectral sensitivity 0.4 0.2 0 94 8475 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s - relative sensitivity rel ? - angular displacement
BPW20RF www.vishay.com vishay semiconductors rev. 1.7, 11-aug-11 4 document number: 81570 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters - + 5.08 nom. ? 8.13 ? 5.9 ? 0.45 - 1 0.2 0.1 - 0.05 + 0.02 0.1 chip position 0.1 9.1 issue:1; 01.07.96 drawing-no.: 6.511-5002.01-4 specifications according to din technical drawings (1.65) 14 3.1 96 12181
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